Patent Details

Patent ID: CN201110139625.2

Isolation structure for a high voltage driver circuit

Description: An isolation structure for high-voltage driver circuit, comprising: P type substrate has P-type epitaxial layer on a P type substrate with a high pressure areas on the P-type epitaxial layer, a low pressure area, high voltage junction termination region a first P-type junction isolation regions and P-type semi-annular junction isolation region at both ends connected to the junction of the first P-type semi-annular P-type isolation region junction isolation region, characterized in that said semi-annular P-type junction isolation region consists of the semi-annular P-type buried layer and the P-type well region semi-annular components, the semi-annular P-type well region located above the semi-annular P-type buried layer, both ends of the semi-annular P-type buried layer and the first P-type junction isolation regions are respectively provided between the first gap and the second gap, the P type substrate and P-type epitaxial layer is extended to the first gap and the second gap and tamped. The present invention solves the high voltage junction termination region P-type buried layer in the hair due to the introduction of local breakdown issues, making LDM effectively isolate the other surrounding portions.

Patent Details:

DOI: H01L29 / 06 (2006.01) I; H01L27 / 06 (2006.01) I